{"created":"2023-06-19T08:36:59.390669+00:00","id":3532,"links":{},"metadata":{"_buckets":{"deposit":"4b1f7c87-58a0-4d74-8167-4c0b3a5cb917"},"_deposit":{"created_by":2,"id":"3532","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"3532"},"status":"published"},"_oai":{"id":"oai:gunma-u.repo.nii.ac.jp:00003532","sets":["572:581:582"]},"author_link":["8784","8786","8787","8785"],"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-11-27","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"23","bibliographicPageEnd":"223131-3","bibliographicPageStart":"223131-1","bibliographicVolumeNumber":"89","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_6_date_61":{"attribute_name":"更新日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-03-27","subitem_date_issued_type":"Created"}]},"item_6_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_6_description_39":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_6_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The formation of very fine Si dots with a bit pitch and a track pitch of less than 25 nm using\\nelectron-beam (EB) lithography on ZEP520 and calixarene EB resists and CF4 reactive ion etching\\nhas been demonstrated. The experimental results indicate that the calixarene resist is very suitable\\nfor forming an ultrahigh-packed bit array pattern of Si dots. This result promises to open the way\\ntoward 1 Tbit/in.2 storage using patterned media with a dot size of <15 nm.","subitem_description_type":"Abstract"}]},"item_6_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_6_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1063/1.2400102","subitem_relation_type_select":"DOI"}}]},"item_6_relation_43":{"attribute_name":"異版である","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":" http://apl.aip.org/","subitem_relation_type_select":"URI"}}]},"item_6_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(C)2006 American Institute of Physics"}]},"item_6_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_6_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hosaka, Sumio"}],"nameIdentifiers":[{"nameIdentifier":"8784","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sano, Hirotaka"}],"nameIdentifiers":[{"nameIdentifier":"8785","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shirai, Masumi"}],"nameIdentifiers":[{"nameIdentifier":"8786","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sone, Hayato"}],"nameIdentifiers":[{"nameIdentifier":"8787","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-11-25"}],"displaytype":"detail","filename":"ApplPhysLett_89_223131.pdf","filesize":[{"value":"322.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_89_223131.pdf","url":"https://gunma-u.repo.nii.ac.jp/record/3532/files/ApplPhysLett_89_223131.pdf"},"version_id":"b4e05f60-d763-41fa-b448-7083d44e6134"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Nanosilicon dot arrays with a bit pitch and a track pitch of 25  nm formed by electron-beam drawing and reactive ion etching for 1 Tbit/in.2 storage","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Nanosilicon dot arrays with a bit pitch and a track pitch of 25  nm formed by electron-beam drawing and reactive ion etching for 1 Tbit/in.2 storage"}]},"item_type_id":"6","owner":"2","path":["582"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-02-29"},"publish_date":"2008-02-29","publish_status":"0","recid":"3532","relation_version_is_last":true,"title":["Nanosilicon dot arrays with a bit pitch and a track pitch of 25  nm formed by electron-beam drawing and reactive ion etching for 1 Tbit/in.2 storage"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-06-19T12:58:51.155162+00:00"}