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Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry
http://hdl.handle.net/10087/2940
http://hdl.handle.net/10087/2940fbe3e082-b00b-4496-b30b-c4990d9e434c
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JApplPhys_96_3247.pdf (147.0 kB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2008-02-29 | |||||
| タイトル | ||||||
| タイトル | Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Kurihara, Katsunori
× Kurihara, Katsunori× Hikino, Shin-ichi× Adachi, Sadao |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The optical properties of N+ ion-implanted Si(100) wafers have been studied using the spectroscopic\nellipsometry (SE). The N+ ions are implanted at 150 keV with fluences in the range between 1\n×10↑16 and 7.5×10↑16 cm−2 at room temperature. A Bruggeman effective-medium-approximation\nand a linear-regression analysis require a four-phase model (substrate/first and second damaged\nlayers/ambient) to explain the experimental data of the as-implanted samples. These analyses\nsuggest that the buried fully amorphous layer can be formed at around ～5×10↑16 cm−2 dose. The\nrapid thermal annealing is performed at 750°C in a dry N2 atmosphere on N+ ion-implanted\nsamples. The SE data reveal that the recrystallization starts to occur very quickly. The time constant\nfor the defect annealing in the deeper damaged layer is determined to be 36 s. The\ndielectric-function spectra ε(E) of microcrystalline silicon deduced here differ appreciably from that\nof the single-crystalline silicon, especially in the vicinity of the critical points. | |||||
| 書誌情報 |
Journal of Applied Physics 巻 96, 号 6, p. 3247-3254, 発行日 2004-09-15 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
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| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | info:doi/10.1063/1.1777807 | |||||
| 権利 | ||||||
| 権利情報 | (C)2004 American Institute of Physics | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 資源タイプ | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Journal Article | |||||
| 異版である | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://jap.aip.org/ | |||||
| 更新日 | ||||||
| 日付 | 2017-03-27 | |||||
| 日付タイプ | Created | |||||
