WEKO3
アイテム
Properties of radio-frequency-sputter-deposited GaN films in a nitrogen/hydrogen mixed gas
http://hdl.handle.net/10087/2949
http://hdl.handle.net/10087/294957e0a6cc-88b7-4c94-8402-93d0203d1be3
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JApplPhys_97_093516.pdf (137.0 kB)
|
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2008-02-29 | |||||
| タイトル | ||||||
| タイトル | Properties of radio-frequency-sputter-deposited GaN films in a nitrogen/hydrogen mixed gas | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Miyazaki, Takayuki
× Miyazaki, Takayuki× Takada, Kouhei× Adachi, Sadao× Ohtsuka, Kohji |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | GaN films have been deposited by reactive sputtering in nitrogen gas at pressures from 0.08 to 2.70\nPa with and without the addition of hydrogen gas. X-ray diffraction (XRD), Fourier transform\ninfrared (FTIR), optical absorption, and photoluminescence (PL) spectroscopy have been used to\ncharacterize the sputter-deposited GaN films. The XRD pattern reveals that the GaN films deposited\nin nitrogen gas at pressures lower than 0.53 Pa are polycrystals with the (0001) texture (α-GaN),\nwhile those deposited at or above 1.07 Pa display mixed crystalline orientations or an\namorphous-like nature. The GaN:H films deposited in nitrogen/hydrogen mixed gas, on the other\nhand, show an amorphous or amorphous-like nature. The FTIR spectra indicate that the GaN:H\nfilms show peaks arising from hydrogen-related bonds at ～1000 and ～3200 cm−1, in addition to the\nGaN absorption band at ,555 cm−1. The optical absorption spectra at 300 K indicate the\nfundamental absorption edges at ～3.38 and ～3.7 eV for the highly oriented α-GaN and amorphous\nGaN:H films, respectively. PL emission has been observed from sputter-deposited a-GaN films at\ntemperatures below 100 K. The GaN:H films also show strong band-edge and donor-acceptor pair\nemissions. The PL emission in the GaN:H film may arise from crystalline GaN particles embedded\nin the amorphous GaN matrix. | |||||
| 書誌情報 |
Journal of Applied Physics 巻 97, 号 9, p. 093516-1-093516-7, 発行日 2005-05-01 |
|||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | info:doi/10.1063/1.1888027 | |||||
| 権利 | ||||||
| 権利情報 | (C)2005 American Institute of Physics | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 資源タイプ | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Journal Article | |||||
| 異版である | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://jap.aip.org/ | |||||
| 更新日 | ||||||
| 日付 | 2017-03-27 | |||||
| 日付タイプ | Created | |||||
