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Properties of light-emitting porous silicon photoetched in aqueous HF/FeCl3 solution
http://hdl.handle.net/10087/2937
http://hdl.handle.net/10087/2937a80b83e7-b718-4959-b798-ce6231455e89
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-02-29 | |||||
タイトル | ||||||
タイトル | Properties of light-emitting porous silicon photoetched in aqueous HF/FeCl3 solution | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Xu, Yan Kai
× Xu, Yan Kai× Adachi, Sadao |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The formation of yellow-light-emitting porous silicon (PSi) layers in a HF solution with adding an oxidizing agent FeCl3 is presented. The PSi layers are formed by photoetching under Xe lamp illumination. The photoluminescence (PL) intensity is strongly dependent on the FeCl3 concentration and shows a maximum at x~25 wt % [50 wt % HF:(x wt % FeCl3 in H2O)=1:1]. The surface topography as characterized by atomic force microscopy reveals features on the order of 20-100 nm with a root-mean-squares roughness of <=2 nm. The Fourier-transform infrared spectroscopy shows a new absorption peak at ~1100 cm-1, which is assigned to the surface oxide stretching mode and grows larger with increasing etching time. The stain etched samples also show PL emission, but they are synthesized only at higher x concentrations (>=20 wt %). The PSi formation mechanism can be explained with the aid of a surface energy-band diagram of n-type silicon in the HF/FeCl3 electrolyte. | |||||
書誌情報 |
Journal of Applied Physics 巻 101, 号 10, p. 103509-1-103509-6, 発行日 2007-05-15 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-8979 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1063/1.2733752 | |||||
権利 | ||||||
権利情報 | (C)2007 American Institute of Physics | |||||
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内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
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出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
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内容記述タイプ | Other | |||||
内容記述 | Journal Article | |||||
異版である | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | URI | |||||
関連識別子 | http://jap.aip.org/ | |||||
更新日 | ||||||
日付 | 2017-03-27 | |||||
日付タイプ | Created |