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Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF/I2 solution
http://hdl.handle.net/10087/2944
http://hdl.handle.net/10087/29443ad5506f-3fe6-4940-a336-cc6772d6c2ce
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JApplPhys_102_063506.pdf (776.4 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2008-02-29 | |||||||||
| タイトル | ||||||||||
| タイトル | Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF/I2 solution | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Adachi, Sadao
× Adachi, Sadao
× Oi, Mitsuru
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| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | The optical properties of porous silicon (PSi) photoetched in aqueous HF/I2 solution are\ninvestigated using spectroellipsomety (SE), electroreflectance (ER), photovoltage (PV),\nphotoconductivity (PC), photoluminescence (PL), and Fourier transform infrared (FTIR)\nspectroscopy. The PSi layers were formed in a HF/I2 solution on n-Si substrates under Xe lamp\nillumination. The SE ε(E) and related data show an interference oscillation in the region below\nE～3 eV, where the PSi material is nearly transparent. The PV and PC spectra reveal three\nindividual peaks A, B, and C at ～1.2, ～1.7, and ～2.5 eV, respectively, arising from the PSi layer\nitself. Peak C is also observed in the ER spectrum, together with a broadened E1 peak at ～3.4 eV.\nChange in the fundamental-absorption-edge nature (EgX) from the indirect gap in crystalline silicon\nto the quasidirect gap in PSi is found in the PV and PC spectra. The PL spectrum shows a broad\npeak at ～2.0 eV(B). Peaks A, B, and C observed in the PSi layer may originate from the nondirect\noptical transitions at and above the lowest absorption edges EgX (A and B) and EgL (C). The\nquantum-mechanical size effect, i.e., a relaxation of the momentum conservation, makes possible\nthe nondirect or quasidirect transitions at and above EgX and EgL in porous materials. The FTIR data\nsupport that the PL emission is due to the surface-sensitive quantum confinement effect. | |||||||||
| 書誌情報 |
Journal of Applied Physics 巻 102, 号 6, p. 063506-1-063506-9, 発行日 2007-09-15 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0021-8979 | |||||||||
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| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | info:doi/10.1063/1.2778745 | |||||||||
| 権利 | ||||||||||
| 権利情報 | (C)2007 American Institute of Physics | |||||||||
| フォーマット | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | application/pdf | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 資源タイプ | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Journal Article | |||||||||
| 異版である | ||||||||||
| 関連タイプ | isVersionOf | |||||||||
| 識別子タイプ | URI | |||||||||
| 関連識別子 | http://jap.aip.org/ | |||||||||
| 更新日 | ||||||||||
| 日付 | 2017-03-27 | |||||||||
| 日付タイプ | Created | |||||||||
