{"created":"2023-06-19T08:36:59.922514+00:00","id":3544,"links":{},"metadata":{"_buckets":{"deposit":"0d912a16-a022-488d-8a26-0c3a6787449c"},"_deposit":{"created_by":2,"id":"3544","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"3544"},"status":"published"},"_oai":{"id":"oai:gunma-u.repo.nii.ac.jp:00003544","sets":["572:581:582"]},"author_link":["8816","8817"],"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-09-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"063506-9","bibliographicPageStart":"063506-1","bibliographicVolumeNumber":"102","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_6_date_61":{"attribute_name":"更新日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-03-27","subitem_date_issued_type":"Created"}]},"item_6_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_6_description_39":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_6_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The optical properties of porous silicon (PSi) photoetched in aqueous HF/I2 solution are\\ninvestigated using spectroellipsomety (SE), electroreflectance (ER), photovoltage (PV),\\nphotoconductivity (PC), photoluminescence (PL), and Fourier transform infrared (FTIR)\\nspectroscopy. The PSi layers were formed in a HF/I2 solution on n-Si substrates under Xe lamp\\nillumination. The SE ε(E) and related data show an interference oscillation in the region below\\nE～3 eV, where the PSi material is nearly transparent. The PV and PC spectra reveal three\\nindividual peaks A, B, and C at ～1.2, ～1.7, and ～2.5 eV, respectively, arising from the PSi layer\\nitself. Peak C is also observed in the ER spectrum, together with a broadened E1 peak at ～3.4 eV.\\nChange in the fundamental-absorption-edge nature (EgX) from the indirect gap in crystalline silicon\\nto the quasidirect gap in PSi is found in the PV and PC spectra. The PL spectrum shows a broad\\npeak at ～2.0 eV(B). Peaks A, B, and C observed in the PSi layer may originate from the nondirect\\noptical transitions at and above the lowest absorption edges EgX (A and B) and EgL (C). The\\nquantum-mechanical size effect, i.e., a relaxation of the momentum conservation, makes possible\\nthe nondirect or quasidirect transitions at and above EgX and EgL in porous materials. The FTIR data\\nsupport that the PL emission is due to the surface-sensitive quantum confinement effect.","subitem_description_type":"Abstract"}]},"item_6_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_6_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1063/1.2778745","subitem_relation_type_select":"DOI"}}]},"item_6_relation_43":{"attribute_name":"異版である","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":" http://jap.aip.org/","subitem_relation_type_select":"URI"}}]},"item_6_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(C)2007 American Institute of Physics"}]},"item_6_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_6_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Adachi, Sadao"}],"nameIdentifiers":[{"nameIdentifier":"8816","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oi, Mitsuru"}],"nameIdentifiers":[{"nameIdentifier":"8817","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-11-25"}],"displaytype":"detail","filename":"JApplPhys_102_063506.pdf","filesize":[{"value":"776.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JApplPhys_102_063506.pdf","url":"https://gunma-u.repo.nii.ac.jp/record/3544/files/JApplPhys_102_063506.pdf"},"version_id":"c6139e74-fbfe-4747-9c48-81a596e74202"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF/I2 solution","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF/I2 solution"}]},"item_type_id":"6","owner":"2","path":["582"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-02-29"},"publish_date":"2008-02-29","publish_status":"0","recid":"3544","relation_version_is_last":true,"title":["Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF/I2 solution"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-06-19T12:58:29.550341+00:00"}