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アイテム
Design, Analysis and Fabrication of Silicon-Based Optical Materials and Photonic Crystal Devices
http://hdl.handle.net/10087/8119
http://hdl.handle.net/10087/81199842de46-840f-470f-a4ab-baa2dabd2cb9
| 名前 / ファイル | ライセンス | アクション |
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Umenyi_Amarachukwu_Valentine.pdf (4.7 MB)
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| Item type | 学位論文 / Thesis or Dissertation(1) | |||||||
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| 公開日 | 2014-02-25 | |||||||
| 著者 |
Umenyi, Amarachukwu Valentine
× Umenyi, Amarachukwu Valentine
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| タイトル | ||||||||
| タイトル | Design, Analysis and Fabrication of Silicon-Based Optical Materials and Photonic Crystal Devices | |||||||
| 言語 | ||||||||
| 言語 | eng | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Silicon photonics | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Photonic crystals | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Si-ion implantation | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Waveguides | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Ultraviolet-light emission | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Silicon nanocrystals | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Finite-difference time-domain method | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | FDTD | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Triangular lattice | |||||||
| キーワード | ||||||||
| 主題Scheme | Other | |||||||
| 主題 | Annealing | |||||||
| 資源タイプ | ||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_46ec | |||||||
| 資源タイプ | thesis | |||||||
| 著者(ヨミ) | ||||||||
| 姓名 | ウメイニ, アマラチュク バレンタイン | |||||||
| 抄録 | ||||||||
| 内容記述タイプ | Abstract | |||||||
| 内容記述 | As the integration of electronic components grow so does the need for low\npower, low cost, and high-speed devices. These have resulted in an increased\nneed for complementary metal-oxide semiconductor (CMOS) compatible\nmaterials and fabrication technique for novel structures as well as accurate\nmodels of the electromagnetic eld behavior in them. Recent advances in\nmaterials technology and fabrication techniques have made it feasible to\nconsider silicon (Si)-based optical materials and photonic crystal (PhC) de-\nvices having physical dimensions of the order of the optical wavelength as\nthe possible means to achieve these needs. Research has shown that light\nemission from Si is possible in low-dimensional state, i.e., Si-nanocrystals\n(Si-ncs). Furthermore, three-dimensional (3-D) control of light compatible\nwith CMOS fabrication technology is required in order to fully integrate\noptical functionalities into the existing Si-technology. However, the di -\nculties in the fabrication of 3-D PhC waveguides have resulted in using\ntwo-dimensional (2-D) PhC structures. Finally, numerical simulations pro-\nvide a framework for quick low-cost feasibility studies and allow for design\noptimization before devices are fabricated. In this dissertation, we present\nour e orts along these directions.\nThis dissertation addressed the method of obtaining high quantum e ciency\nfrom Si-ncs compatible with CMOS processing. Si ions were implanted into\na fused-silica substrate (10 mm 10 mm 1 mmt) at room temperature in\nthe Takasaki ion accelerators for advanced radiation application (TIARA)\nof the Japan Atomic Energy Agency. The implantation energy was 80 keV,\nand the implantation amount was 2 1017 ions/cm2. The Si-implanted sub-\nstrate was cut into four pieces (5 mm 5 mm 1 mmt) using a diamond-wire\nsaw, and the four pieces were annealed in ambient air at 1100, 1150, 1200,\nand 1250 oC for 25 min in a siliconit furnace. PL spectra were measured at\nroom temperature with excitation using a He-Cd laser ( =325 nm). Ultra-\nviolet (UV)-PL spectra having peaks around a wavelength of 370 nm were\nobserved from all the samples. In our experiments, the UV-PL peak had a\nmaximum intensity after annealing at 1250 oC, and the longer wavelength\nPL peak around 800 nm observed from the samples annealed at 1100 and\n1150 oC disappeared by annealing above 1200 oC. The two PL peaks of\nthe Si-ion-implanted samples may have originated from interface layers be-\ntween Si-ncs and SiO2 media. However, we successfully obtained only the\nUV-light emission peaks by selecting the proper annealing temperatures.\nUV-light-emitting materials are expected to be useful as light sources for\nnext-generation optical-disk systems whose data densities are higher than\nBlu-ray Disk systems.\nAdditionally, this dissertation addressed the numerical modeling of PhC de-\nvices. Accurate computations can provide a detailed understanding of the\ncomplex physical phenomena inherent in PhC devices. The nite-di erence\ntime-domain (FDTD) method, which is widely used by many researchers\naround the Globe, is a powerful tool for modeling PhC devices. We devel-\noped a modi ed and easy FDTD method based on a regular Cartesian Yee's\nlattice for calculating the dispersion diagram of triangular lattice PhCs. Our\nmethod uses the standard central-di erence equation, which is very easy to\nimplement in any computing environment. The Bloch periodic boundary\nconditions are applied on the sides of the unit cell by translating the periodic\nboundary conditions to match with the directions of periodicity in the tri-\nangular lattice. Complete and accurate bandgap information is obtained by\nusing this FDTD approach. Convergence, accuracy, and stability analysis\nwere carried out, which ensures the reliability of this method. Numeri-\ncal results for 2-D transverse electric (TE) and transverse magnetic (TM)\nmodes in triangular lattice PhCs are in good agreement with results from\n2-D plane wave expansion method. The obtained results are in consistence\nwith the reported ones. To ease the practical application of this method,\nclear explanations on the computer implementation are also provided.\nFinally, this dissertation addressed the use of CMOS-compatible fabrication\nmethod and 2-D periodic structures to realize the control of light in 3-D.\nIn particular, we designed, analyzed and fabricated novel PhC waveguides\nutilizing Si-ion implantation and 2-D periodic structures. The transport of\nions in matter (TRIM) prediction of implantation depth distribution pro le\n(1 1017 ions/cm2, 80 keV) shows the range of about 150 nm. Assuming the\ne ective refractive index of the Si-rich region to be 1.89 and by using FDTD\nmethod, the PhC design parameters based on the telecommunication wave-\nlength ( =1.55 m) were obtained by varying the radius to lattice constant\nratio (r=a) from 0.2 to 0.45. We analyzed both TE and TM mode prop-\nagation in triangular-lattice PhCs. The designed parameters were found\nto be a=664 nm and r=a=0.35. The PBG spanned from normalized fre-\nquency of 0.39 to 0.46 [2 c/a] in the TE-mode triangular lattice and the\ngap to midgap ratio was 0.16. The designed pattern was fabricated and\nthe diameter, the period and the depth of air holes of the waveguide were\nestimated by atomic force microscopy (AFM) to be 464, 666 and 175 nm,\nrespectively. Numerical results using FDTD characterization show that,\nstraight line PhC waveguides can achieve 100% transmission, while the\n60o bend showed 80% transmission owing to the dispersion mismatch at\nthe two 60o bends.\nThese results may serve as useful guides and components in future high-\ndensity photonic integrated circuits associated with optical communications,\ncomputing, and signal processing. | |||||||
| 内容記述 | ||||||||
| 内容記述タイプ | Other | |||||||
| 内容記述 | 学位記番号：工博甲404 | |||||||
| 書誌情報 | p. 1-140, 発行日 2010-09 | |||||||
| 著者版フラグ | ||||||||
| 出版タイプ | AM | |||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||
| 出版者 | ||||||||
| 出版者 | 群馬大学工学研究科 | |||||||
| 資源タイプ | ||||||||
| 内容記述タイプ | Other | |||||||
| 内容記述 | Thesis or Dissertation | |||||||
| 学位名 | ||||||||
| 学位名 | 博士（工学） | |||||||
| 学位授与機関 | ||||||||
| 学位授与機関名 | 群馬大学 | |||||||
| 学位授与年月日 | ||||||||
| 学位授与年月日 | 2010-09-30 | |||||||
| 学位授与番号 | ||||||||
| 学位授与番号 | 12301甲第404号 | |||||||
| 更新日 | ||||||||
| 2019-12-05 | ||||||||
